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| SMD Type Silicon NPN Epitaxial 2SC2462 SOT-23 +0.1 2.9-0.1 +0.1 0.4-0.1 Transistors IC Unit: mm Features +0.1 2.4-0.1 Low frequency amplifier. +0.1 1.3-0.1 1 +0.1 0.95-0.1 +0.1 1.9-0.1 2 0.55 0.4 3 +0.05 0.1-0.01 +0.1 0.97-0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg Rating 50 40 5 100 150 150 -55 to +150 Unit V V V mA mW Electrical Characteristics Ta = 25 Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Base-emitter voltage Collector cutoff current Emitter cutoff current DC current gain Collector-emitter saturation voltage Symbol VCBO VCEO VEBO VBE ICBO IEBO hFE Testconditons IC = 10iA , IE = 0 IC = 1mA , RBE = IE = 10iA , IC = 0 VCE = 12V , IC = 2mA VCB = 30V, IE=0 VEB = 2V, IC=0 VCE = 12V , IC = 2mA 100 Min 50 40 5 0.75 0.5 0.5 500 0.2 V Typ Max Unit V V V V A A VCE(sat) IC = 10mA , IB = 1mA hFE Classification Marking Rank hFE 100 LB B 200 160 LC C 320 250 LD D 500 +0.1 0.38-0.1 0-0.1 www.kexin.com.cn 1 SMD Type 2SC2462 Typlcal Characteristics Transistors IC Fig.1 Maximum Collector Dissipation Curve 2 www.kexin.com.cn |
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